A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength

Q: A p-n Photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength

(a) 6000 Å

(b) 4000 nm

(c) 6000 nm

(d) 4000 Å

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Ans: (d)
Sol: $\large \lambda_{max} = \frac{1242}{E(eV)} $

$\large \lambda_{max} = \frac{1242}{2.5} $

= 496.8 nm = 4968 A°